sot-89 1. base 2. collector 3. emitter sot-89 plastic-encapsulate t ransistors transistor (pnp) features z z low voltage z high current applications z medium power general purposes z driver stages of audio amplifiers marking: BCX53:ah, BCX53-10:ak, BCX53-16:al maximum ratings (t a =25 unless otherwise noted) symbol param eter value unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -5 v i c collector current -1 a p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol t est conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a,i e =0 -100 v collector-emitter breakdown voltage v (br)ceo * i c =-10 ma,i b =0 -80 v emitter-base breakdown voltage v (br)ebo i e =-100a,i c =0 -5 v collector cut-off current i cbo v cb =-30v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a h fe(1)* v ce =-2v, i c =-5ma 63 h fe(2)* v ce =-2v, i c =-150ma 63 250 dc current gain h fe(3)* v ce =-2v, i c =-0.5a 40 collector-emitter saturation voltage v ce(sat) * i c =-0.5a,i b =-50ma -0.5 v base -emitter voltage v be* v ce =-2v, i c =-0.5a -1 v transition frequency f t v ce =-5v,i c =-10ma, f=100mhz 50 mhz * pulse test classification of h fe(2) rank BCX53 BCX53-10 BCX53-16 range 63C 250 63 C 160 100C 250 2012- 0 willas electronic corp. BCX53
-0.1 -1 -10 1 10 100 1000 -0 -20 -40 -60 -80 -100 0 50 100 150 -1 -10 -100 -1000 10 100 1000 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 -0.1 -1 -10 -100 -1000 -0 -200 -400 -600 -800 -1000 -0.1 -1 -10 -100 -1000 -0 -100 -200 -300 -400 -0 -1 -2 -3 -4 -5 -6 -0 -50 -100 -150 -200 -250 -300 -350 -400 -0 -200 -400 -600 -800 -1000 -0.1 -1 -10 -100 -1000 f=1mhz i e =0 / i c =0 t a =25 o c typical characteristics reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib c ib c ob -20 transition frequency f t (mhz) collector current i c (ma) v ce =-5v t a =25 o c i c f t v ce = -2v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe collector power dissipation p c (w) ambient temperature t a ( ) p c t a collector current i c (ma) base-emitter saturation voltage v besat (mv) t a =25 t a =100 =10 i c v besat t a =25 t a =100 =10 v cesat i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) common emitter t a =25 -2.0ma -1.8ma -1.6ma -1.4ma -1.2ma -1.0ma -0.8ma -0.6ma -0.4ma i b =-0.2ma collector-emitter voltage v ce (v) collector current i c (ma) static characteristic vce=-2v ta=25 ta=100 o c base-emitter voltage v be (mv) collector current i c (ma) i c ?? v be 2012- 0 willas electronic corp. sot-89 plastic-encapsulate t ransistors BCX53
outline drawing dimensions in inches and (millimeters) sot-89 rev.c .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061ref (1.55)ref .023(0.58) .016(0.40) .060typ (1.50)typ .118typ (3.0)typ .197(0.52) .013(0.32) .017(0.44) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) 2012- 0 willas electronic corp. sot-89 plastic-encapsulate t ransistors BCX53
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